4 results
Sub-30 nm FinFETs with Schottky-Barrier Source/Drain Featuring Complementary Metal Silicides and Fully-Silicided Gate for P-FinFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 995 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0995-G05-17
- Print publication:
- 2007
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Sub 50nm Strained n-FETs Formed on Silicon-Germanium-on-Insulator Substrates and the Integration of Silicon Source/Drain Stressors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 995 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0995-G03-04
- Print publication:
- 2007
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Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si0.35Ge0.65OI) Wafers using Cyclical Thermal Oxidation and Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 994 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0994-F09-03
- Print publication:
- 2007
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Material and Electrical Characterization of Nickel Silicide-Carbon as Contact Metal to Silicon-Carbon Source and Drain Stressors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 995 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0995-G05-07
- Print publication:
- 2007
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